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Structured register of government actions in the geoeconomic space — export controls, tariffs, sanctions, FDI screening, subsidies, industrial-policy laws — cross-referenced into the country, minerals, and ETF surface. Charter: docs/IPTM_CHARTER.md.
Severity 1-5 is the qualitative impact rating (1=minor, 5=structural). The bilateral-trade-grounded quant scorer is the next IPTM milestone. RBI (Register Breadth Index) is a complementary structural-breadth indicator from scripts/py/iptm/breadth.py; divergence between RBI and severity is itself informative (high-sev / low-RBI = strategic chokepoint; low-sev / high-RBI = broad but shallow). Every action has at least one primary source URL. Verify-or-don't-file. See also themes, timeline, graph, sankey, map, country exposure, sector exposure, material exposure (+ graph), weekly briefs, portfolio scan, escalation monitor, trans-shipment hubs. Internal triage tools (RSS-poller candidate feed, source-feed health) live under /admin/candidates + /admin/sources. Subscribe via Atom feed (accepts ?country=CN, ?material=lithium, ?issuer=BIS, ?type=export_control, ?etf=SOXX, ?company=NVDA, ?minSeverity=4, ?year=2026, ?q=…) or pull /api/iptm/actions.
The US Bureau of Industry and Security (BIS) amended the Export Administration Regulations to remove three foreign-owned semiconductor fabs operating in China — Intel Semiconductor (Dalian) Ltd, Samsung China Semiconductor Co. Ltd, and SK hynix Semiconductor (China) Ltd — from the Validated End-User (VEU) Authorizations list (15 CFR Part 748). BIS framed the VEU program as a "loophole" that previously allowed these fabs to receive most US-origin chipmaking equipment, software and technology license-free, a privilege no US-owned fab in China ever had. After the effective date, every restricted shipment to these fabs will require an individual export license, reviewed case-by-case under the existing 2022/2023 advanced- computing controls. The rule is published as Federal Register document 2025-16735 (90 FR 42321), Docket BIS-2025-0555, RIN 0694-AK32.
The US Bureau of Industry and Security published a correction on 8 November 2023 to a rule it had issued on 17 October 2023 revising the Validated End-User (VEU) authorisations for Samsung China Semiconductor Co. Ltd. and SK hynix Semiconductor (China) Ltd. in the People's Republic of China. The correction fixes two omissions from the October rule: a missing word in the description of eligible items for SK hynix Semiconductor (China) Ltd., and a failure to remove the standalone VEU entry for SK hynix Semiconductor (Wuxi) following its merger into SK hynix Semiconductor (China) Ltd. No substantive policy change is introduced; this is a technical and clerical correction only.
The US Bureau of Industry and Security revised the Validated End-User (VEU) authorizations for Samsung China Semiconductor Co. Ltd. (Xi'an NAND fab) and SK Hynix Semiconductor (China) Ltd. (Wuxi DRAM fab) on 17 October 2023, expanding each from its previous restricted eligible-items list to cover "all items subject to the Export Administration Regulations." Both authorizations exclude EUV equipment and related components: Samsung China is barred from EUV items for NAND production; SK Hynix is barred from EUV items for DRAM production. The revision was published simultaneously with the broader October 2023 advanced- computing chip controls (FR Doc 2023-22560), giving the two South Korean memory fabs a calibrated safe harbour under the newly tightened regime.