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Structured register of government actions in the geoeconomic space — export controls, tariffs, sanctions, FDI screening, subsidies, industrial-policy laws — cross-referenced into the country, minerals, and ETF surface. Charter: docs/IPTM_CHARTER.md.
Severity 1-5 is the qualitative impact rating (1=minor, 5=structural). The bilateral-trade-grounded quant scorer is the next IPTM milestone. RBI (Register Breadth Index) is a complementary structural-breadth indicator from scripts/py/iptm/breadth.py; divergence between RBI and severity is itself informative (high-sev / low-RBI = strategic chokepoint; low-sev / high-RBI = broad but shallow). Every action has at least one primary source URL. Verify-or-don't-file. See also themes, timeline, graph, sankey, map, country exposure, sector exposure, material exposure (+ graph), weekly briefs, portfolio scan, escalation monitor, trans-shipment hubs. Internal triage tools (RSS-poller candidate feed, source-feed health) live under /admin/candidates + /admin/sources. Subscribe via Atom feed (accepts ?country=CN, ?material=lithium, ?issuer=BIS, ?type=export_control, ?etf=SOXX, ?company=NVDA, ?minSeverity=4, ?year=2026, ?q=…) or pull /api/iptm/actions.
The Hong Kong government launched the Frontier Technology Research Support Scheme (FTRSS) on 26 September 2025, a HK$3 billion matching-grant fund administered by the Innovation and Technology Commission. The scheme funds the eight University Grants Committee (UGC)-funded universities to attract international top-tier researchers and procure research facilities in frontier-technology fields, with each successful application eligible for HK$100-300 million. The government frames the scheme as dovetailing with national strategic planning for frontier technologies; applications closed 25 November 2025 with results expected in H1 2026.
On 2025-06-25, Hong Kong's New Industrialisation Vetting Committee announced it had supported an application from J Cube Semiconductor (Hong Kong) Limited under the New Industrialisation Acceleration Scheme (NIAS) — the third project approved under the scheme. The project will establish production facilities for third-generation (silicon carbide, SiC) semiconductor wafers in Hong Kong, classed under the advanced-manufacturing-technology sector. Total project cost is estimated at over HKD 700 million, with expected NIAS government funding of up to HKD 200 million — the scheme's per-project cap. The same announcement introduced an enhancement measure for the related New Industrialisation Funding Scheme (NIFS).